Scanning electron beam exposure system

Details Scanning electron beam exposure system Scanning electron beam exposure system

1989-04-18

1990-11-06

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

049688936

ABSTRACT:
A scanning electron beam exposure system includes two apertures (39a, 48a) for forming a rectangular beam (31). The cross section of the rectangular beam is changed by a deflection unit (47X, 47Y) arranged between the two apertures. The rectangular beam is refocused by a refocusing coil (51) to improve the peripheral sharpness of a projected image of the beam. The refocusing coil is controlled in accordance with the cross section (X.sub.1, Y.sub.1) of the beam.

REFERENCES:
patent: 4145597 (1979-03-01), Yasuda
patent: 4362942 (1982-12-01), Yasuda
Japenese Pat. No. 56-01710 (Abstract); vol. 5, No. 167 (E-79) (839), Oct. 24, 1981.
Patent Abstracts of Japan, vol. 5, No. 167, 10/24/81.
IBM Technical Disclosure Bulletin, vol. 21, No. 8, Jan. 1979, p. 3185, "High Speed E-Beam Focus Correction for Variably Shaped Spot Exposure", Stickel.
IEEE Transactions on Electron Devices, vol. Ed-26, No. 4, Apr. 1979, pp. 668-670, "Recent Advances in Electron-Beam Lithography for the High-Volume Production of VLSI Devices", by H. C. Pfeiffer.

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