Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-03-22
2011-03-22
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000
Reexamination Certificate
active
07911830
ABSTRACT:
Various magnetoresistive memory cells and architectures are included which enable nonvolatile memories having high information density.
REFERENCES:
patent: 2911627 (1959-11-01), Kilburn et al.
patent: 3972786 (1976-08-01), Ballard
patent: 4751677 (1988-06-01), Daughton et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4829476 (1989-05-01), Dupuis et al.
patent: 4980859 (1990-12-01), Guterman et al.
patent: 5051695 (1991-09-01), Hunter et al.
patent: 5173873 (1992-12-01), Wu et al.
patent: 5237529 (1993-08-01), Spitzer
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5389838 (1995-02-01), Orengo
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5442508 (1995-08-01), Smith
patent: 5477143 (1995-12-01), Wu
patent: 5477482 (1995-12-01), Prinz
patent: 5515314 (1996-05-01), Kouhei et al.
patent: 5561368 (1996-10-01), Dovek et al.
patent: 5563839 (1996-10-01), Herdt et al.
patent: 5565236 (1996-10-01), Gambino et al.
patent: 5585986 (1996-12-01), Parkin
patent: 5587943 (1996-12-01), Torok
patent: 5592413 (1997-01-01), Spitzer
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5640754 (1997-06-01), Lazzari et al.
patent: 5650889 (1997-07-01), Yamamoto et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5652445 (1997-07-01), Johnson
patent: 5654566 (1997-08-01), Johnson
patent: 5661449 (1997-08-01), Araki et al.
patent: 5682345 (1997-10-01), Roohparvar et al.
patent: 5686837 (1997-11-01), Coehoorn et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5852574 (1998-12-01), Naji
patent: 5892708 (1999-04-01), Pohm
patent: 5903708 (1999-05-01), Kano et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 5929636 (1999-07-01), Torok
patent: 5969978 (1999-10-01), Prinz
patent: 5986962 (1999-11-01), Bertin et al.
patent: 5989406 (1999-11-01), Beetz et al.
patent: 6031273 (2000-02-01), Torok
patent: 6034886 (2000-03-01), Chan et al.
patent: 6055179 (2000-04-01), Koganci et al.
patent: 6104632 (2000-08-01), Nishimura
patent: 6134138 (2000-10-01), Lu et al.
patent: 6166944 (2000-12-01), Ogino
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6169292 (2001-01-01), Yamazaki et al.
patent: 6278594 (2001-08-01), Engel et al.
patent: 6292336 (2001-09-01), Horng et al.
patent: 6353552 (2002-03-01), Sample et al.
patent: 6469927 (2002-10-01), Spitzer
patent: 6483740 (2002-11-01), Spitzer
patent: 6493257 (2002-12-01), Coughlin, Jr. et al.
patent: 6542000 (2003-04-01), Black et al.
patent: 6573713 (2003-06-01), Torok
patent: 6594175 (2003-07-01), Torok
patent: 6859063 (2005-02-01), Nuspi et al.
patent: 6917088 (2005-07-01), Takahashi et al.
patent: 6992919 (2006-01-01), Andrei
patent: 6992935 (2006-01-01), Ooishi
patent: 7259062 (2007-08-01), Lee
patent: 7760544 (2010-07-01), Guo et al.
patent: 2002/0024842 (2002-02-01), Spitzer et al.
patent: 2002/0037595 (2002-03-01), Hosotani
patent: 2002/0141232 (2002-10-01), Saito et al.
patent: 2002/0180432 (2002-12-01), Torok et al.
patent: 2003/0007398 (2003-01-01), Daughton et al.
patent: 2003/0214835 (2003-11-01), Nejad et al.
patent: 2004/0010671 (2004-01-01), Sampsa et al.
patent: 2004/0037109 (2004-02-01), Witcraft et al.
patent: 2004/0061166 (2004-04-01), Kim
patent: 2004/0075152 (2004-04-01), Barna
patent: 2004/0183198 (2004-09-01), Andrei et al.
patent: 2004/0196704 (2004-10-01), Andrei et al.
patent: 2005/0018476 (2005-01-01), Kamijima et al.
patent: 2005/0083743 (2005-04-01), Andrei et al.
patent: 1 132 917 (2000-03-01), None
patent: WO 96/25740 (1996-08-01), None
patent: WO 87/00959 (1997-02-01), None
patent: WO 97/41601 (1997-11-01), None
patent: WO 00/72324 (2000-11-01), None
patent: WO 02/05268 (2002-01-01), None
patent: WO 02/05470 (2002-01-01), None
patent: WO 02/078100 (2002-10-01), None
S. Chikazumi,Physics of Magnetism, Section 5.3, entitled “Ferrimagnetic Oxides and Compounds,” John Wiley & Sons (1964).
Jaquelin K. Spong, et al., “Giant Magnetoresistive Spin Valve Bridge Sensor”, Mar. 1996,IEEE Transactions on Magnetics, vol. 32, No. 2, pp. 366-371.
Mark Johnson, “The All-Metal Spin Transistor”, May 1994,IEEE Spectrum, pp. 47-51.
Mark Johnson, “Bipolar Spin Switch”, Apr. 16, 1996,Science, vol. 260, pp. 320-323.
J.M. Daughton, “Magnetoresistive Memory Technology,” Jul. 28-Aug. 2, 1991,Int'l Workshop on Science and Technology of Thin Films for the 21stCentury, vol. 216, pp. 162-168.
K.T.M. Ranmuthu et al., “New Low Current Memory Modes with Giant Magneto-Resistance Materials,” Apr. 13, 1993,Digests of International Magnetics Conference, 2 pages.
J.L. Brown, “1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells,” Sep. 1994,IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part A, vol. 17, No. 3, pp. 373-379.
Torok et al., “Measurement of the Easy-Axis and Hk Probability Density Functions for Thin Ferromagnetic Films Using the Longitudinal Permeability Hysteresis Loop”,Journal of Applied Physics, 33, No. 10, Oct. 1962, pp. 3037-3041.
Lenssen, et al, “Expectations of MRAM in Comparison With Other Non-Volatile Memory Technologies”, Phillips Research Laboratories, pp. 26-30.
Torok, et al, “Longitudinal Permeability in Thin Permalloy Films”,Journal of Applied Physics, 34, No. 4, (Part 2), Apr. .1963, pp. 1064-1066.
Paul a. Packan, “Pushing the Limits”, Sep. 24, 1999. science Mag, vol. 285, pp. 2079-2081.
Pratt, W.P., et al., “Perpendicular Giant Magnetoresistances of Ag/Co Multilayers”,Physical Review Letters, 66 (23): 3060-3063 (Jun. 1991).
Parkin, S.S.P, et al., “Oscillatory Magnetic Exchange Coupling through Thin Copper Lavers”,Physical Review Letters, 66(16): 2152-2155 (Apr. 1991).
Jones, K., “Texas Instruments Plans Large Expansion”,The New York Times(Aug. 20, 1993).
Callaby, D.R. et al., Solid State Memory Study Final Report, Technical Report No. RE-0013, National Media Lab, St. Paul, MN (Feb. 1994).
National Media Laboratory Spring Review on Solid-State Memory Technologies, Proc. 1994 Spring Conference on Solid-State Memory Technologies, Pasadena, CA, (May 23-25, 1994), pp. 3-8, 97, 121, 123-133.
Harrison, R.W., “Laser Scanning Surface Profilomete”,IBM Technical Disclosure Bullentin, 13(3): 789-790 (Aug. 1970).
Hylton, T.L., et al, “Giant Magnetoresistance at Low Fields in Discontinuous NiFe-Ag Multilayer Thin Films”,Science, 261:1021-1024 (Aug. 1993).
Xiao, et al., “Giant Magnetoresistance in Nonmultilayer Magnetic Systems”, Physical review Letters, vol. 68, No. 25, Jun. 22, 1992, pp. 3749-3752.
Zhang, S., “Theory of Giant Magnetoresistance in Magnetic Granular Films”, Appl. Phys. Lett., 61(15): 1855-1857 (Oct. 1992).
Prinz, “Magnetoelectronics”, www.sciencemag.org,Science, vol. 282, Nov. 27, 1998.
Spitzer and Torok, “A New Kind of Memory”,The Industrial Physicist, Jun. 2000.
Grünberg, “Layered Magnetic Structures: History, Highlights, Applications”,Physics Today, May 2001.
S. A. Wolf, “Spintronics: A Spin-Based Electronics Vision for the Future”, www.sciencemag.org,Science, vol. 294, Nov. 16, 2001.
Sankar Das Sarnia, “Spintronics”,American Scientist, vol. 89, Nov.-Dec. 2001.
Zorpette, “The Quest for the Spin Transistor”, IEEE Spectrum, Dec. 2001.
Awschalom et al., “Spintronics”,Scientific American, www.sciam.com, Jun. 2002.
K.-M.H. Lenssen, “Expectations of MRAM in Comparison with Other Non-Volatile Memory Technologies”, Non-Volatile Memory Technology Symposium 2000, Nov. 15-16, 2000.
K.-M.H. Lenssen, “Magnetic Random Access Memory (MRAM) and its prospects”, Non-Volatile Memory Technology Symposium 2001, Nov. 7-8 2001.
Barna et al., “The Transpinnor: An Active Spin-Based Device” Non-Volatile Memory Technology Symposium 2002, Nov. 4-6 2002.
http://www.boulder.nist.gov/div816/2002/Magnetodynamics/.
H.W. Schumacher et al., “Current-induced precessional magnetization reversa
Fleming David Leslie
Spitzer Richard
Torok E. James
Wuori Edward
Integrated Magnetoelectronics
Nguyen Tuan T.
Weaver Austin Villeneuve & Sampson LLP
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