Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S348000, C257S349000, C257S350000
Reexamination Certificate
active
07057234
ABSTRACT:
According to an aspect of the invention, a device structure is provided where charging and discharging occur in a trapping region formed by a stack of films that is placed on the back of a thin silicon channel. Uncoupling the charging mechanisms that lead to the memory function from the front gate transistor operation allows efficient scaling of the front gate. But significantly more important is a unique character of these devices: these structures can be operated both as a transistor and as a memory. The thin active silicon channel and the thin front oxide provide the capability of scaling the structure to tens of nanometers, and the dual function of the device is obtained by using two voltage ranges that are clearly distinct. At small voltages the structure operates as a normal transistor, and at higher voltages the structure operates as a memory device.
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Cornell Research Foundation Inc.
Kang Donghee
Wolf Greenfield & Sacks P.C.
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