Scalable magnetic random access memory device

Details Scalable magnetic random access memory device Scalable magnetic random access memory device

2006-07-06

2008-10-07

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07433225

ABSTRACT:
A method is provided for writing data to an MRAM device having a plurality of magnetic memory cells configured in an array between a plurality of word lines and bit lines. At least one of the magnetic memory cells includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one spacer layer, and a third free magnetic layer separated from the second free magnetic layer by at least one anti-parallel coupling layer. A magnetic moment of the first free magnetic is greater than both a magnetic moment of the second free magnetic layer and a magnetic moment of the third free magnetic layer.

REFERENCES:
patent: 6545906 (2003-04-01), Savtechenko et al.
patent: 7227773 (2007-06-01), Nguyen et al.
patent: 7230845 (2007-06-01), Wang et al.

Affiliated with

Also associated with

Rating

Scalable magnetic random access memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Scalable magnetic random access memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scalable magnetic random access memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4012871