Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-03-22
2011-03-22
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07911829
ABSTRACT:
A magnetic memory cell is provided. The magnetic memory cell includes at least one fixed magnetic layer, and a plurality of free magnetic layers, separated from the at least one fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one first parallel coupling layer, and a third free magnetic layer separated from the second free magnetic layer by at least one second parallel coupling layer. A magnetic moment of the second free magnetic layer is greater than both a magnetic moment of the first free magnetic layer and a magnetic moment of the third free magnetic layer. The magnetic memory cell may be used in conjunction with a magnetic random access memory device.
REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 7227773 (2007-06-01), Nguyen et al.
patent: 7230845 (2007-06-01), Wang et al.
patent: 7433225 (2008-10-01), Worledge
patent: 2008/0212365 (2008-09-01), Worledge
patent: 2008/0259675 (2008-10-01), Worledge
Alexanian Vazken
International Business Machines - Corporation
Luu Pho M
Michael J. Chang, LLC
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