Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-21
1998-08-11
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257310, 257532, H01L 27108, H01L 2941
Patent
active
057930767
ABSTRACT:
A capacitor for high density DRAM applications comprises a high-.epsilon. capacitor dielectric such as BST or PZT in an arrangement which obviates the need for barrier layers during fabrication. The fabrication process allows for electrode placement by simple sputter deposition and further provides for the possibility of capacitor spacing below that of conventional lithographic techniques.
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Fazan Pierre C.
Schuele Paul
Hardy David B.
Micro)n Technology, Inc.
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