Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Malsawma, Lex H. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29300
Reexamination Certificate
active
11044703
ABSTRACT:
A plurality of split gate non-volatile memory cells are formed vertically in a trench along the sidewalls. Each cell is comprised of a bistable element and an adjacent fixed gate threshold element that share a common respective control gate/access gate. The bistable element has a gate insulator stack that is comprised of either a floating gate or a charge trapping layer over a tunnel insulator. A plurality of silicon rich nitride layers are formed over the floating gate or charge trapping layer and separated by a high dielectric constant layer.
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Leffert Jay & Polglaze P.A.
Malsawma Lex H.
Micro)n Technology, Inc.
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