Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2006-03-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C365S185100, C365S185140, C365S185150, C365S185110
Reexamination Certificate
active
07009244
ABSTRACT:
An memory device, and method of making same, that includes source and drain regions defining a channel region therebetween. A select gate is formed over and insulated from a first portion of the channel region. A conductive floating gate is disposed over and insulated from the source region and a second portion of the channel region. A notch is formed in the floating gate bottom surface having an edge that is either aligned with an edge of the source region or is disposed over the source region. A conductive control gate is disposed adjacent to the floating gate. By having the source region terminate under the thicker insulation region provided by the notch, the breakdown voltage of the source junction is increased. Alternately, the lower portion of the floating gate is formed entirely over the source region, for producing fringing fields to control the adjacent portion of the channel region.
REFERENCES:
patent: 4462090 (1984-07-01), Iizuka
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5194925 (1993-03-01), Ajika et al.
patent: 5280446 (1994-01-01), Ma et al.
patent: 5303187 (1994-04-01), Yu
patent: 5338952 (1994-08-01), Yamauchi
patent: 5414286 (1995-05-01), Yamauchi
patent: 5475634 (1995-12-01), Wang et al.
patent: 5668757 (1997-09-01), Jeng
patent: 5854507 (1998-12-01), Miremadi et al.
patent: 5856943 (1999-01-01), Jeng
patent: 5912843 (1999-06-01), Jeng
patent: 6091104 (2000-07-01), Chen
patent: 6414350 (2002-07-01), Hsieh et al.
patent: 6483718 (2002-11-01), Hashimoto
patent: 6583503 (2003-06-01), Akram et al.
patent: 6621115 (2003-09-01), Jenq et al.
patent: 6624465 (2003-09-01), Chien et al.
patent: 6686656 (2004-02-01), Koh et al.
patent: 6747310 (2004-06-01), Fan et al.
patent: 6855980 (2005-02-01), Wang et al.
patent: 6868015 (2005-03-01), Wang
patent: 2004/0130947 (2004-07-01), Fan et al.
Jenq Ching-Shi
Yen Ting P.
DLA Piper Rudnick Gray Cary US LLP
Integrated Memory Technologies, Inc.
Pham Long
R ao Shrinivas H.
LandOfFree
Scalable flash EEPROM memory cell with notched floating gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Scalable flash EEPROM memory cell with notched floating gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scalable flash EEPROM memory cell with notched floating gate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3605091