Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-02
2000-05-02
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, H01L 2976
Patent
active
060575751
ABSTRACT:
A scalable flash EEPROM cell has a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate has a first edge and a second edge with a first portion over the select gate and insulated therefrom, and a second portion over a second portion of the channel and over the source, and is between the select gate and the source. A control gate is over the floating gate and is insulated therefrom and has a first edge and a second edge aligned with the first edge and the second edge of the floating gate.
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Crane Sara
Integrated Memory Technologies, Inc.
Yin Ronald L.
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