Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1995-06-26
1997-04-15
Powell, William
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
117915, 216101, 438 46, 438745, H01L 2100
Patent
active
056205570
ABSTRACT:
A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
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Akasaki Isamu
Amano Hiroshi
Kato Hisaki
Koide Norikatsu
Koike Masayoshi
Powell William
Toyoda Gosei Co,., Ltd.
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