Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-28
2011-06-28
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C438S664000, C438S592000
Reexamination Certificate
active
07968457
ABSTRACT:
Embodiments of an apparatus and methods for forming enhanced contacts using sandwiched metal structures are generally described herein. Other embodiments may be described and claimed.
REFERENCES:
patent: 5624870 (1997-04-01), Chien et al.
patent: 5838051 (1998-11-01), Yen et al.
patent: 6404058 (2002-06-01), Taguwa
patent: 6690093 (2004-02-01), Ahn et al.
patent: 2005/0287799 (2005-12-01), Lee et al.
patent: 2007/0141798 (2007-06-01), Bohr
patent: 2007/0231984 (2007-10-01), Metz
patent: 2008/0230845 (2008-09-01), Okonogi et al.
Chau Robert S.
Dewey Gilbert
Kavalieros Jack
Metz Matthew V.
Mukherjee Niloy
Intel Corporation
Lane Scott M.
Luu Chuong A.
LandOfFree
Sandwiched metal structure silicidation for enhanced contact does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sandwiched metal structure silicidation for enhanced contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sandwiched metal structure silicidation for enhanced contact will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2720241