Sample treatment apparatus for use in molecular beam epitaxy

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

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117200, 117201, C30B 3500

Patent

active

055564658

ABSTRACT:
A method and apparatus in Molecular Beam Epitaxy (MBE) in order to grow thin films. The substrate is attached to the rotatable manipulator and its normal will be aligned parallel to the rotation axis in vacuum for providing a real time information on the growth parameters by ellipsometry. The apparatus includes a rotatable manipulator head where the substrate is attached to, and aligning elements to align the substrate normal sufficiently parallel to the rotation axis of the manipulator in vacuum.

REFERENCES:
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5131752 (1992-07-01), Yu et al.
patent: 5206706 (1993-04-01), Quinn
patent: 5399521 (1995-03-01), Celii et al.

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