Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1994-09-15
1996-09-17
Garrett, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117200, 117201, C30B 3500
Patent
active
055564658
ABSTRACT:
A method and apparatus in Molecular Beam Epitaxy (MBE) in order to grow thin films. The substrate is attached to the rotatable manipulator and its normal will be aligned parallel to the rotation axis in vacuum for providing a real time information on the growth parameters by ellipsometry. The apparatus includes a rotatable manipulator head where the substrate is attached to, and aligning elements to align the substrate normal sufficiently parallel to the rotation axis of the manipulator in vacuum.
REFERENCES:
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5131752 (1992-07-01), Yu et al.
patent: 5206706 (1993-04-01), Quinn
patent: 5399521 (1995-03-01), Celii et al.
DCA Instruments Oy
Garrett Felisa C.
Kubovcik Ronald J.
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