Sample surface processing method

Details Sample surface processing method Sample surface processing method

2007-08-21

2007-08-21

Ahmed, Shamim (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S712000, C438S714000, C438S715000, C438S719000, C438S720000, C216S069000, C216S072000, C216S075000, C216S079000

Reexamination Certificate

active

10671608

ABSTRACT:
A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

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