Sample support prepared by semiconductor silicon process...

Details Sample support prepared by semiconductor silicon process... Sample support prepared by semiconductor silicon process...

2006-02-17

2008-03-18

Wells, Nikita (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

C250S311000, C250S492200, C250S491100, C216S002000, C438S048000

Reexamination Certificate

active

07345289

ABSTRACT:
A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 μm or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.

REFERENCES:
patent: 7195872 (2007-03-01), Agrawal et al.
patent: 2006/0243655 (2006-11-01), Striemer et al.

Affiliated with

Also associated with

Rating

Sample support prepared by semiconductor silicon process... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sample support prepared by semiconductor silicon process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sample support prepared by semiconductor silicon process... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3962880