Sample support prepared by semiconductor silicon process...

Details Sample support prepared by semiconductor silicon process... Sample support prepared by semiconductor silicon process...

2008-03-18

2008-03-18

Wells, Nikita (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

C250S311000, C250S492200, C250S491100, C216S002000, C438S048000

Reexamination Certificate

active

11356698

ABSTRACT:
A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 μm or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.

REFERENCES:
patent: 7195872 (2007-03-01), Agrawal et al.
patent: 2006/0243655 (2006-11-01), Striemer et al.

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