Salicide process for selectively forming a monocobalt disilicide

Details Salicide process for selectively forming a monocobalt disilicide Salicide process for selectively forming a monocobalt disilicide

1996-06-21

1998-07-14

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438586, 438660, H01L 2144

Patent

active

057803617

ABSTRACT:
An improved salicide process for selectively forming a monocobalt disilicide film on a substrate having a surface including both an insulation region containing silicon and a silicon region comprises the following steps. Cobalt is deposited on the substrate, wherein the substrate is heated up and maintained at a first temperature which is capable of causing cobalt to react only with silicon in the silicon region without reacting with silicon in the insulation region. The substrate is subjected to a vacuum annealing at a temperature equal to or near the first temperature to form a film made of one selected from the group consisting of dicobalt monosilicide and monocobalt monosilicide. The substrate is subjected to a heat treatment at a second temperature which is higher than the first temperature and is capable of causing a phase transition from dicobalt monosilicide or monocobalt monosilicide into monocobalt disilicide to thereby form a monocobalt disilicide film on the silicon region except on the insulation region.

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