Salicide process

Details Salicide process Salicide process

2007-10-23

2007-10-23

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S651000, C438S664000, C438S581000, C438S583000

Reexamination Certificate

active

11553477

ABSTRACT:
A salicide process is provided. A metal layer selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300˜400 degrees centigrade for 10˜60 seconds and the second step of the second thermal process is performed at 450˜550 degrees centigrade for 10˜60 seconds.

REFERENCES:
patent: 2005/0236715 (2005-10-01), Ku et al.
patent: 2006/0057844 (2006-03-01), Domenicucci et al.
patent: 2006/0141657 (2006-06-01), Ohnuma et al.
patent: 2006/0194399 (2006-08-01), Wen et al.
patent: 2006/0199324 (2006-09-01), Yu et al.

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