Salicide process

Details Salicide process Salicide process

2007-07-03

2007-07-03

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S650000, C438S651000, C438S663000, C438S664000

Reexamination Certificate

active

10907710

ABSTRACT:
A salicide process is provided. A metal layer selected from a group consisting of titanium, cobalt, platinum, palladium and an alloy thereof is formed over a silicon layer. A first thermal process is performed. Next, a second thermal process is performed, wherein the second thermal process includes a first step performed at 600˜700 degrees centigrade for 10˜60 seconds and a second step performed at 750˜850 degrees centigrade for 10˜60 seconds. If the metal layer is selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300˜400 degrees centigrade for 10˜60 seconds and the second step of the second thermal process is performed at 450˜550 degrees centigrade for 10˜60 seconds.

REFERENCES:
patent: 2003/0132487 (2003-07-01), Cabral et al.
patent: 2004/0087160 (2004-05-01), Agnello et al.
patent: 2004/0203229 (2004-10-01), Fang et al.
patent: 2004/0259350 (2004-12-01), Hashimoto
patent: 2005/0070082 (2005-03-01), Kammler et al.
patent: 2005/0196960 (2005-09-01), Koo et al.
patent: 2006/0134844 (2006-06-01), Lu et al.

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