Safety device for electrically programmable read-only memory

Static information storage and retrieval – Floating gate – Particular biasing

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365184, 365210, 365228, G11C 1300

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048112917

ABSTRACT:
A safety device for an electrically programmable read-only memory of the type comprising a matrix of memory cells, each comprising a floating gate MOS transistor that exhibits a defined threshold voltage after programming, each cell being accessible by rows and columns connected to means which can be used to apply, to these rows and columns, potentials representing the data to be recorded in the cells or potentials representing the command for reading the recorded data. This device comprises at least one reference memory cell included in the memory, the memory cell exhibiting a threshold voltage, after programming, which is lower than the minimum of the dispersal of threshold voltages of the transistors of the matrix.

REFERENCES:
patent: 4683554 (1987-07-01), Lockwood et al.
Patents Abstracts of Japan, vol. 5, No. 169 (P-86) [841], Oct. 28, 1981.
JP-A-56 98 790 (Nippon Denki K.K.) 08-08-1981.

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