Safe method for etching silicon dioxide

Details Safe method for etching silicon dioxide Safe method for etching silicon dioxide

1992-06-08

1993-12-07

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 156662, 134 3, 134 31, H01L 2100

Patent

active

052680690

ABSTRACT:
Anhydrous ammonium fluoride is used as a safe source of hydrogen fluoride for etching native or other silicon dioxide layers from silicon substrates. Heating the anhydrous ammonium fluoride above its sublimation temperature results in the generation of hydrogen fluoride gas which etches the silicon dioxide. Controlled amounts of water vapor are used during the etch reaction to ensure complete etching of the thin oxide layers down to within hundredths of a monolayer and to achieve precise etch rate control.

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