Sacrificial layer technique to make gaps in MEMS applications

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Reexamination Certificate

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07005314

ABSTRACT:
A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrificial material; and removing the sacrificial material. An apparatus comprising a first structure on a substrate; and a second structure on the substrate and separated from the first structure by an unfilled gap defined by the thickness of a removed film.

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Nguyen, Clark T.C., “Micromachining technologies for miniaturized communication devices,”SPIE, Sep. 1998, vol. 3511, pp. 24-38.

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