Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2010-11-01
2011-11-08
Nguyen, Dao (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
Reexamination Certificate
active
08053901
ABSTRACT:
The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO2, SiCOH, or doped silicate glass.
REFERENCES:
patent: 6043146 (2000-03-01), Watanabe et al.
patent: 6066557 (2000-05-01), Lukanc et al.
patent: 6100183 (2000-08-01), Lu et al.
patent: 6211069 (2001-04-01), Hu et al.
patent: 6265779 (2001-07-01), Grill et al.
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6287955 (2001-09-01), Wang et al.
patent: 6291333 (2001-09-01), Lou
patent: 6362093 (2002-03-01), Jan et al.
patent: 6365529 (2002-04-01), Hussein et al.
patent: 6380078 (2002-04-01), Liu et al.
patent: 6380084 (2002-04-01), Lim et al.
patent: 6410426 (2002-06-01), Xing et al.
patent: 6429115 (2002-08-01), Tsai et al.
patent: 6440840 (2002-08-01), Chen
patent: 6444557 (2002-09-01), Biolsi et al.
patent: 6492270 (2002-12-01), Lou
patent: 6812140 (2004-11-01), Chang et al.
patent: 6815329 (2004-11-01), Babich et al.
patent: 6893956 (2005-05-01), Ruelke et al.
patent: 6987059 (2006-01-01), Burke et al.
patent: 7052932 (2006-05-01), Huang et al.
patent: 7132363 (2006-11-01), Yang et al.
patent: 7211897 (2007-05-01), Yamanoue et al.
patent: 2003/0060037 (2003-03-01), Wu
patent: 2004/0058547 (2004-03-01), Morrow et al.
patent: 2005/0101118 (2005-05-01), Kimura et al.
patent: 2005/0118796 (2005-06-01), Chiras et al.
patent: 2005/0153537 (2005-07-01), Cheng et al.
patent: 2005/0181598 (2005-08-01), Kailasam
patent: 2005/0196959 (2005-09-01), Ueno
patent: 2006/0151887 (2006-07-01), Oh et al.
patent: 2006/0197231 (2006-09-01), Cho
patent: 2008/0026566 (2008-01-01), Gambino et al.
patent: 2010/0197132 (2010-08-01), Ahn et al.
patent: 2010/0219529 (2010-09-01), Morrow et al.
Gambino Jeffrey P.
Stamper Anthony K.
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Nguyen Dao
Nguyen Tram H
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Sacrificial inorganic polymer intermetal dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sacrificial inorganic polymer intermetal dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sacrificial inorganic polymer intermetal dielectric... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4312788