Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-29
1999-03-30
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257288, 257296, H01L 2362
Patent
active
058893075
ABSTRACT:
The process of semiconductor fabrication includes certain steps, such as plasma etching and ion implantation, that may cause a substantial charge to accumulate upon certain electrically isolated conductive or semiconductive elements formed upon the surface of a silicon wafer. One such element is the common plate of a dynamic random access memory (DRAM) array. When a substantial charge is accumulated upon such a common plate, dielectric breakdown may occur in one or more of the capacitive storage cells in the memory array. The discharge device disclosed herein is designed to catastrophically fail when such accumulated charge becomes excessive, thereby providing a discharge path for such accumulated charge. In this manner, the discharge device will be destroyed rather than the critical elements of the semiconductor device.
REFERENCES:
patent: 3418493 (1968-12-01), Uzunoglu et al.
patent: 4855953 (1989-08-01), Tsukamoto et al.
patent: 4941028 (1990-07-01), Chen et al.
Chaudhuri Olik
Micro)n Technology, Inc.
Wille Douglas A.
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