Sacrificial annealing layer for a semiconductor device and a...

Details Sacrificial annealing layer for a semiconductor device and a... Sacrificial annealing layer for a semiconductor device and a...

2005-06-21

2005-06-21

Niebling, John F. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257S757000

Reexamination Certificate

active

06909154

ABSTRACT:
Numerous embodiments of a method and apparatus for a sacrificial annealing layer are disclosed. In one embodiment, a method of forming a sacrificial annealing layer for a semiconductor device comprises forming one or more sacrificial layers on at least a portion of the top surface of a semiconductor device, annealing at least a portion of the device, and removing a substantial portion of the one or more sacrificial layers, where the removing results in no substantial physical alterations to the device.

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