Rule based OPC evaluating method and simulation-based OPC...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C716S030000, C703S014000

Reexamination Certificate

active

06928636

ABSTRACT:
A rule-based OPC evaluating method and a simulation-based OPC model evaluating method for accurately evaluating line width controllability are disclosed. Mask pattern design data about an evaluation-use mask are input to rule-based OPC to obtain correction data about the mask pattern on the evaluation-use mask. An evaluation-use wafer is fabricated based on the correction data thus acquired. Gate patterns on the evaluation-use wafer are measured for size. Based on a simulation-based OPC model having undergone process calibration, simulation data are output corresponding to all gate patterns on the evaluation-use wafer. The measured data about the evaluation-use gate patterns are compared with the simulation data, whereby the rule-based OPC is evaluated.

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