Rugged CMOS output stage design

Details Rugged CMOS output stage design Rugged CMOS output stage design

1994-10-26

1996-10-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257373, H01L 2362

Patent

active

055634389

ABSTRACT:
A rugged MOS output stage transistor having a third region formed adjacent to the drain region on the side opposite the source. The third region is doped to have a polarity opposite the drain and forms in combination with the drain an output protect diode which renders the transistor relatively free of latch-up. The concept of the third region of opposite polarity adjacent to the drain may be used in both NMOSFET and PMOSFET as well as CMOS output stages.

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