Rugged and fast power MOSFET and IGBT

Details Rugged and fast power MOSFET and IGBT Rugged and fast power MOSFET and IGBT

2006-01-17

2011-10-25

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S328000, C257S329000

Reissue Patent

active

RE042864

ABSTRACT:
A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon design. A gate electrode overlies the upper surface of the substrate. A drain electrode is provided proximate to the lower surface of the substrate.

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patent: 4959699 (1990-09-01), Lidow et al.
patent: 5008725 (1991-04-01), Lidow et al.
patent: 5545909 (1996-08-01), Williams et al.
patent: 5646418 (1997-07-01), Frazier et al.
patent: 6459128 (2002-10-01), Kunori et al.

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