RTP lamp design for oxidation and annealing

Details RTP lamp design for oxidation and annealing RTP lamp design for oxidation and annealing

1998-01-14

2000-03-07

Jeffery, John A.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219405, 219411, F27B 514

Patent

active

060343567

ABSTRACT:
A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.

REFERENCES:
patent: 4468260 (1984-08-01), Hiramoto
patent: 4469529 (1984-09-01), Mirmura
patent: 4481406 (1984-11-01), Muka
patent: 4535228 (1985-08-01), Mimura et al.
patent: 4956538 (1990-09-01), Moslehi
patent: 5315092 (1994-05-01), Takahashi et al.
patent: 5418885 (1995-05-01), Hauser et al.
patent: 5719991 (1998-02-01), Sandhu et al.
patent: 5848889 (1998-12-01), Tietz et al.

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