Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-11-22
2005-11-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S213000
Reexamination Certificate
active
06967884
ABSTRACT:
A temperature compensated RRAM sensing circuit to improve the RRAM readability against temperature variations is disclosed. The circuit comprises a temperature dependent element to control the response of a temperature compensated circuit to generate a temperature dependent signal to compensate for the temperature variations of the resistance states of the memory resistors. The temperature dependent element can control the sensing signal supplied to the memory resistor so that the resistance states of the memory resistor are compensated against temperature variations. The temperature dependent element can control the reference signal supplied to the comparison circuit so that the output signal provided by the comparison circuit is compensated against temperature variations. The temperature dependent element is preferably made of the same material and process as the memory resistors.
REFERENCES:
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6577549 (2003-06-01), Tran et al.
patent: 6608790 (2003-08-01), Tran et al.
patent: 6735546 (2004-05-01), Scheuerlein
patent: 6753562 (2004-06-01), Hsu et al.
Curtin Joseph P.
Phung Anh
Ripma David C.
Sharp Laboratories of America Inc.
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