Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2000-06-08
2001-06-19
Nelms, David (Department: 2818)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S049130, C365S230030
Reexamination Certificate
active
06249467
ABSTRACT:
FIELD OF INVENTION
The present invention relates generally to performing row redundancy in a content addressable memory (CAM) device.
BACKGROUND
Row and/or column redundancy has been used to improve the yield of memory devices such as static random access memory (SRAM) devices. A fuse element is typically placed in series with each word line in a main memory array. When a memory cell is determined to be defective, the fuse for the corresponding word line is blown to de-couple the main address decoder from the row incorporating the defective memory cell. The address of the defective row is programmed into a spare address decoder that selects a spare row of memory cells in response to subsequent read or write access operations to the defective address in the main memory array.
Traditional row redundancy techniques, however, do not scale well for content addressable memory (CAM) devices. A CAM device is a binary or ternary storage device that can simultaneously compare a specific pattern of comparand data with data stored in each row of CAM cells in its CAM array. Match results are reflected on match lines that are provided to a priority encoder that translates the matched location into a match address or CAM index for output from the CAM device. Each row of CAM cells is typically connected to a word line as in conventional SPAMs and at least one match line. Thus, in order to use traditional row redundancy techniques in a CAM array, each row of CAM cells would use a first fuse for the word line and a second fuse for the match line. Additionally, to ensure that the de-coupled match line did not provide erroneous data to the priority encoder, an additional pull-down circuit would be needed for each match line to guarantee that the de-coupled match line indicated a mismatch state for the defective row of CAM cells. The additional fuse per row, and pull-down circuitry per row, would increase the size of the CAM array. As fuses typically do not scale well with process technologies, this increase in the number of fuses is not readily remedied by migration to a smaller geometry fabrication process. Thus, it would be desirable to provide a row redundancy scheme for CAMs that is more area efficient than using fuses on each word line and each match line.
In addition, since manufacturing defects may not be uniform across a wafer, defective cells may be concentrated in certain portions of a CAM device. Thus, in a CAM device having a number of CAM blocks each including a main CAM array and a spare or redundant row, the defective cells may be concentrated in one or more of the CAM blocks. Consequently, while first CAM blocks may be defect free, second CAM blocks may have more than one defective row. Since each CAM block has only one spare row and therefore can replace only one defective row, the second CAM blocks having more than one defective row may not be usable, even though spare rows may be available in other CAM blocks. Thus, it would also be desirable to provide a row redundancy scheme for CAMs that allow spare row(s) from a first CAM block to be used to replace a defective row in a second CAM block.
SUMMARY OF THE INVENTION
A method and apparatus for performing row redundancy in a CAM device is disclosed that allows defective rows in one CAM block to be functionally replaced by spare rows from any CAM block in the device. In accordance with the present invention, the CAM device includes a main address decoder, a plurality of CAM blocks, a corresponding plurality of spare address decoders, and a block select circuit. In one embodiment, each CAM block includes a main CAM array having a plurality of rows of CAM cells each coupled to a corresponding word line, and a spare row of CAM cells coupled to a spare word line. Each spare row may be used to functionally replace a defective row in the same CAM block or in any other CAM block by programming the address of the defective row into the corresponding spare address decoder. During subsequent read or write operations, an input address is compared with the programmed addresses stored in the spare address decoders. If there is match, thereby indicating that the selected row is defective and has been replaced, the address decoder storing the matching programmed address enables the spare row in the corresponding CAM block, and the block select circuit enables the corresponding CAM block for the operation, so that the read or write operation accesses the spare row instead of the defective row. If there is not a match, the spare address decoder does not enable the corresponding spare word line, and the block select circuit enables the CAM block identified by the input address for the operation.
Other objects, features, and advantages of the present invention will be apparent from the accompanying drawings and from the detailed description that follows below.
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Khanna Sandeep
Nataraj Bindiganavale S.
Pereira Jose Pio
Srinivasan Varadarajan
Ho Hoai V.
Nelms David
NetLogic Microsystems, Inc
Paradice III William L.
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