Row decoder for preventing leakage current and semiconductor...

Details Row decoder for preventing leakage current and semiconductor... Row decoder for preventing leakage current and semiconductor...

2006-07-11

2008-10-21

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185230, C365S230060

Reexamination Certificate

active

07440320

ABSTRACT:
A row decoder preventing leakage current and a semiconductor memory device including the same are provided. The row decoder includes an address decoder and a selection signal generator. The address decoder decodes a predetermined address signal and activates an enable signal. The selection signal generator electrically connects a boosted voltage node to an output node to activate a block selection signal when the enable signal is activated and electrically breaks a path between the boosted voltage node and the output node and a path between the boosted voltage node and a ground voltage node when the enable signal is deactivated. The selection signal generator includes a feedback circuit, a switch, and a direct current (DC) path breaker. The feedback circuit is electrically connected to the output node to generate an output voltage that varies with a voltage level of the block selection signal. The switch transmits the output voltage of the feedback circuit to the output node. The DC path breaker turns on the switch when the enable signal is activated and turns off the switch when the enable signal is deactivated. Accordingly, when a supply voltage applied to the semiconductor memory device is low, a DC path is broken in the row decoder, thereby preventing the leakage current.

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