Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-09-06
2005-09-06
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189070, C714S733000
Reexamination Certificate
active
06940766
ABSTRACT:
A method for locating a repair solution for a memory that includes a memory array comprising a plurality of rows and a plurality of columns, N redundant rows, and M redundant columns is described. Both N and M are integers, where N is greater than or equal to zero and M is greater than or equal to zero. The N redundant rows and the M redundant columns are collectively referred to as redundant lines. The method includes generating a first defect matrix representing defects in the memory array. Additionally, the method includes recursively, until either the repair solution is found or the redundant lines are consumed: selecting a first line represented in the defect matrix and having at least one defect; generating a second defect matrix by eliminating at least the defects in the first line from the first defect matrix; and determining if the repair solution is found.
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Chen Zongbo
Konuk Haluk
Landivar José L.
Broadcom Corporation
Garlick Harrison & Markison LLP
Luu Pho M.
Phung Anh
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