Rough dielectric film by etchback of residue

Details Rough dielectric film by etchback of residue Rough dielectric film by etchback of residue

1996-09-13

1998-05-19

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430319, 430330, G03F 700

Patent

active

057534209

ABSTRACT:
A capacitor and method of forming the capacitor for high density applications. The capacitor (100) comprises a storage node (106) having peaks (108) formed on a surface thereof. The peaks (108) are created by forming a photoresist residue layer (130) on the polysilicon layer of the storage node (108). The structure is then dry etched using the residue layer (130) as a mask to create peaks (108).

REFERENCES:
patent: 5411911 (1995-05-01), Ikeda
patent: 5562801 (1996-10-01), Nulty

Affiliated with

Also associated with

Rating

Rough dielectric film by etchback of residue does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rough dielectric film by etchback of residue, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rough dielectric film by etchback of residue will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851608