Room temperature metal direct bonding

Details Room temperature metal direct bonding Room temperature metal direct bonding

2005-03-22

2009-10-13

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S734000, C257S781000, C257S784000, C257SE25030, C257SE23003, C257SE23169, C257SE21603

Reexamination Certificate

active

07602070

ABSTRACT:
A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

REFERENCES:
patent: 4612083 (1986-09-01), Yasumoto et al.
patent: 4818728 (1989-04-01), Rai et al.
patent: 4904328 (1990-02-01), Beecher et al.
patent: 5489804 (1996-02-01), Pasch
patent: 5501003 (1996-03-01), Bernstein
patent: 5516727 (1996-05-01), Broom
patent: 5610431 (1997-03-01), Martin
patent: 5734199 (1998-03-01), Kawakita et al.
patent: 5821692 (1998-10-01), Rogers et al.
patent: 5866942 (1999-02-01), Suzuki et al.
patent: 6071761 (2000-06-01), Jacobs
patent: 6232150 (2001-05-01), Lin et al.
patent: 6258625 (2001-07-01), Brofman et al.
patent: 6297072 (2001-10-01), Tilmans et al.
patent: 6322600 (2001-11-01), Brewer et al.
patent: 6552436 (2003-04-01), Burnette et al.
patent: 6555917 (2003-04-01), Heo
patent: 6583515 (2003-06-01), James et al.
patent: 6624003 (2003-09-01), Rice
patent: 6627814 (2003-09-01), Stark
patent: 6660564 (2003-12-01), Brady
patent: 6828686 (2004-12-01), Park
patent: 6909194 (2005-06-01), Farnworth et al.
patent: 2002/0113241 (2002-08-01), Kubota et al.
patent: 2002/0173120 (2002-11-01), Enquist
patent: 0 465 227 (1992-01-01), None
patent: WO 01/61743 (2001-08-01), None
patent: WO 03/054954 (2003-07-01), None
Qin-Yi Tong, et al., “Low Temperature Wafer Direct Bonding”, Journal of Microelectromechanical Systems, IEEE Service Center, Piscataway, NJ, vol. 3, No. 1, Mar. 1, 1994, pp. 29-35, XP-000885425, ISSN 1057-7157.

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