ROM memory cell with non-uniform threshold voltage

Details ROM memory cell with non-uniform threshold voltage ROM memory cell with non-uniform threshold voltage

1996-03-21

1998-07-28

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257404, 365104, H01L 27112, H01L 2978

Patent

active

057866180

ABSTRACT:
The present invention features a ROM memory cell with a non-uniform threshold voltage. The ROM memory cell includes a channel region divided into several channels deposed in parallel along the axial direction of carrier transport. Afterwards, one code-implant procedure is performed to program the memory cell to store one of multiple states, thereby constituting a multiple-state ROM, the fabrication of which does not require multiple photolithography as well as multiple implantation processes.

REFERENCES:
patent: 4395725 (1983-07-01), Parekh
patent: 4549336 (1985-10-01), Sheppard

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