Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-27
2000-01-18
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257910, H01L 2976, H01L 29861
Patent
active
060159952
ABSTRACT:
A read only memory device, which includes a P-type substrate, is provided. Several essentially parallel N-pole regions are located on the substrate. The N-pole regions extends in a first direction, and are separated from each other by a space. The N-pole regions form bit lines. Several N-type diffusion regions are located under selected portions of respective N-pole regions. Several P-type diffusion regions are located over respective selected portions of the N-pole regions. Each respective P-type diffusion region and associated N-pole region forms a diode. Several essentially parallel word lines extend in a second direction. Each word line is separated from an adjacent word line by a space. Each of the word lines is coupled to each of the corresponding P-type diffusion regions.
REFERENCES:
patent: 5441907 (1995-08-01), Sung et al.
patent: 5654225 (1997-08-01), Zambrano
Coleman William David
Fahmy Wael
United Microelectronics Corp.
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