Robust transistors with fluorine treatment

Details Robust transistors with fluorine treatment Robust transistors with fluorine treatment

2006-07-07

2009-12-29

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257SE29089, C257SE29091, C257SE29246

Reexamination Certificate

active

07638818

ABSTRACT:
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.

REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5488237 (1996-01-01), Kuwata
patent: 6046464 (2000-04-01), Schetzina
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6071780 (2000-06-01), Okamoto
patent: 6316820 (2001-11-01), Schmitz et al.
patent: 6452221 (2002-09-01), Lai et al.
patent: 6555850 (2003-04-01), Sakamoto et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6706574 (2004-03-01), Brar
patent: 7161194 (2007-01-01), Parikh et al.
patent: 7230284 (2007-06-01), Parikh et al.
patent: 7408182 (2008-08-01), Smart et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2002/0052076 (2002-05-01), Khan et al.
patent: 2002/0066908 (2002-06-01), Smith
patent: 2002/0167023 (2002-11-01), Chavarkar et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0085409 (2003-05-01), Shen et al.
patent: 2004/0021152 (2004-02-01), Nguyen et al.
patent: 2004/0124435 (2004-07-01), D'Evelyn et al.
patent: 2005/0051796 (2005-03-01), Parikh et al.
patent: 2005/0133816 (2005-06-01), Fan et al.
patent: 2005/0170574 (2005-08-01), Sheppard et al.
patent: 2005/0173728 (2005-08-01), Saxler
patent: 2005/0253168 (2005-11-01), Wu et al.
patent: 2005/0263788 (2005-12-01), Kunii et al.
patent: 2006/0006415 (2006-01-01), Wu et al.
patent: 2006/0121682 (2006-06-01), Saxler
patent: 2006/0163594 (2006-07-01), Kuzmik
patent: 2006/0220062 (2006-10-01), Green et al.
patent: 2006/0220165 (2006-10-01), Hase
patent: 2006/0226442 (2006-10-01), Zhang et al.
patent: 2006/0255366 (2006-11-01), Sheppard et al.
patent: 2007/0018198 (2007-01-01), Brandes et al.
patent: 2008/0017844 (2008-01-01), Nichols et al.
patent: 2008/0124851 (2008-05-01), Zhang et al.
patent: 1577951 (2005-03-01), None
patent: WO2005114743 (2005-12-01), None
Cai et al. “High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment”, Jul. 2005, pp. 435-437, IEEE Electron Device Letters, vol. 26, No. 7.
International Search Report PCT/US2006/026405, Mar. 26, 2008.
Eastman et al., “Undoped AlGaN/GaN HEMTs for Microwave Power Amplification”, IEEE Transaction on Electron Devices, vol. 48, No. 3 Mar. 2001.
Wu et al. “High Al-Content AlGaN/GaN MODFET's for Ultrahigh Performance”, IEEE Electron Device Letters, vol. 19, No. 2 Feb. 1998.
Journal of Applied Physics, “Effect of Polarization Fields on Transport Properties in AlGaN/GaN Heterostructures”, Hsu et al., vol. 89, No. 3, Dec. 2001 pp. 1783-1789.
IEEE Electron Device Letters, “AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor”, Kahn et al., vol. 21, No. 2 Feb. 2000, pp. 63-65.
CRC Press, “The Electrical Engineering Handbook” Second Edition, Dorf, p. 994, (1997).
B. Gelmont, et al. “Monte Carlo Simulation of Electron Transport in Gallium Nitride”, Journal of Applied Physics, 74(3), Aug. 1993, pp. 1818-1821.
R. Gaska et al., “Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates”, applied physics letters, vol. 72, pp. 707-709, Feb. 1998.
Y. F. Wu et al. “GaN-Based FETs for Microwave Power Amplification”, IEICE Trans. Electron, vol. E-82-C, pp. 1895-1905, Nov. 1999.
Y.F. Wu et al.,“Very-High Power Density AlGaN/GaN HEMTs” IEEE Trans. Electron Device, vol. 48, No. 3 Mar. 2001, pp. 586-590.
M. Micovic et al, “AlGaN/GaN Heterojunction Field Effect Transistors Grown by Nitrogen Plasma Assisted Molecular Beam Epitaxy”, IEEE Trans. Electron Device, vol. 48 No. 3, pp. 591-596, Mar. 2001.
R. Gaska et al., “High-Temperature Performance of AlGaN/GaN HFET's on SiC Substrates”, IEEE Electron Device Letters, vol. 18, No. 10, Oct. 1997, pp. 492-494.
Ping et al. “DC and Microwave Performance of High-Current AlGaN/GaN Heterostructure Field Effect Transistors Grown on p-Type SiC Substrates”, IEEE Electron Devices Letters, vol. 19, No. 2, Feb. 1998, pp. 54.
G. Sullivan et al. “High-Power 10-GHz Operation of AlGaN HFET's on Insulating SiC”, IEEE Electron Device Letters, vol. 19, No. 6, pp. 198-200, Jun. 1998.
Y. F. Wu et al., “30-W/mm GaN HEMTs by Field Plate Optimization”, IEEE Electron Device Letters vol. 25, No. 3, pp. 117-119, Mar. 2004.
V. Kumar et al., “AlGaN/GaN HEMTs on SiC With fT of Over 120 GHz”, IEEE Electron Device Letters, vol. 23, No. 8, Aug. 2002, pp. 455-457.
Result of Examination for related Korean Application No. 10-2004-7001027, Dec. 15, 2009.
IEEE Electron Device Letters, vol. 21, No. 2, Feb. 2000, pp. 63-65, “AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,”, M. Asif Khan et al.
Japanese Publication No. Hei 11-224881, Aug. 17, 1999, Compound Semiconductor Apparatus.
IEEE Electron Device Letters, vol. 21, No. 9, Sep. 2000, pp. 421-423, “High Breakdown GaN HEMT with Overlapping Gate Structure,” N.-Q. Zhang et al.
Examination Report from related European Patent Application No. 02769655.8-1235, Dated: Nov. 3, 2008.
Second Office Action from related China Application No. 02818502.1., Dated: Feb. 19, 2009.
Examination Report from related European Patent Application No. 06851411.6-2203, dated: Jan. 26, 2009.
“Enhancement of Base Conductivity Via the Piezoelectric Effect in AlGaN/GaN HBTs”, Asbeck et al., Aug. 18, 1999, Solid State Electronics 44 (2000) 211 219, pp. 211-219.
“New UV Light Emitter based on AlGaN Heterostructures with Graded Electron and Hole Injectors”, Johnson et al., XP-002505432, Mat. Res. Soc. Symp. Proc. vol. 743, 2003, Materials Research Society, pp. 1.2.4.1-1.7.4.6.
“Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers”, Simon et al., XP-002505433, Mater. Res. Soc. Symp. Proc. vol. 892, 2006 Materials Research Society,pp. 1-6.
Examiner's Report from related Canada Patent Application No. 2,399,547, Dated: Mar. 4, 2009.
Office Action for family related U.S. Appl. No. 11/799,786, dated Sep. 8, 2008.
Office Action for family related U.S. Appl. No. 11/356,791, dated: Sep. 2, 2008.
Examination Report re European Application No. 02 792 174.1-1235, Dated Oct. 7, 2008.
Related Extended European Search Report re European Application No. 08250197.4-1235/1973163, Dated: Nov. 6, 2008.
Xing, “High Breakdown Voltage ALGAN-GAN HEMTs Achieved by Multiple Field Plates”, IEEE Electron Device Letters,vol. 25, No. 4, Apr. 2004, pp. 161-163.
Related European Examination Report for European Patent Application No. 02769655.8, dated: Dec. 8, 2008.
Related Office Action from Japanese Patent Office re Japanese Patent Application No. 2002-590421, dated: Oct. 21, 2008.
Japanese Patent Application Public Disclosure 2000-68498, Date: Mar. 3, 2000.
Japanese Patent Application Public Disclosure 2001-77353, dated Mar. 23, 2001.
Official Rejection of Japanese Patent Application No. 2003-535260, dated: Jun. 19, 2009.
Patent Abstracts of Japan, Pub. 10-223901, Pub. Date: Aug. 21, 1998.
Khan et al., “AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates”, Applied Physics Letters Vo. 77, No. 9, Aug. 2000, pp. 1339-1341.
Extended European Search Report, for related European Application No. 07253716.0, Dated: Jun. 25, 2009.
Examination Report re related European Application No. 01 905 364.4, dated: Jun. 24, 2009.

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