Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-09-20
2005-09-20
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S081000, C257S085000, C257S091000, C257S093000, C257S098000, C257S099000, C257S103000
Reexamination Certificate
active
06946682
ABSTRACT:
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a passivation layer on the ohmic contact. The diode is characterized in that it will emit at at least 50% of its original optical power and remain substantially unchanged in operating voltage after operating for at least 1000 hours at 10 miliamps in the environment of 85% relative humidity at a temperature of 85 C. An LED lamp incorporating the diode is also disclosed.
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Ishikawa, Hidenorl, et al.: “Effects of Surface Treatments and Metal Work Functions on Electrical Properties at p-GaN/Metal Interfaces,” J.Appl.Phys., vol. 81, No. 3, Feb. 1, 1997, pp. 1315-1322.
Edmond John A.
Negley Gerald H.
Slater, Jr. David B.
Cree Inc.
Louie Wai-Sing
Pham Long
Summa & Allan P.A.
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