Robust dual damascene process

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430313, G03F 726

Patent

active

060429992

ABSTRACT:
A robust dual damascene process is disclosed where the substructure in a substrate is protected from damage caused by multiple etchings required in a damascene process by filling a contact or via hole opening with a protective material prior to the forming of the conductive line opening of the damascene structure having an etch-stop layer separating a lower and an upper dielectric layer. In the first embodiment, the protective material is partially removed from the hole opening reaching the substructure prior to the forming of the upper conductive line opening by etching. In the second embodiment, the protective material in the hole is removed at the same time the upper conductive line opening is formed by etching. In a third embodiment, the disclosed process is applied without the need of an etch-stop layer for the dual damascene process of this invention.

REFERENCES:
patent: 5604156 (1997-02-01), Chung et al.
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5686354 (1997-11-01), Avanzino et al.
patent: 5702982 (1997-12-01), Lee et al.
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5899720 (1999-05-01), Mikagi
patent: 5904863 (1999-05-01), Hatfield et al.

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