Robust diffusion barrier for Cu metallization

Details Robust diffusion barrier for Cu metallization Robust diffusion barrier for Cu metallization

1999-02-12

2000-10-31

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 2144

Patent

active

061402311

ABSTRACT:
A new method of forming a stacked tantalum nitride barrier layer to prevent copper diffusion is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A via is opened through the insulating layer to one of the underlying semiconductor device structures. A stacked mode tantalum nitride barrier layer is conformally deposited within the via. A layer of copper is deposited overlying the stacked mode tantalum nitride barrier layer to complete copper metallization in the fabrication of an integrated circuit device. The stacked mode tantalum nitride barrier layer has misaligned grain boundaries. This prevents diffusion of copper into the dielectric layer.

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