Robust DEMOS transistors and method for making the same

Details Robust DEMOS transistors and method for making the same Robust DEMOS transistors and method for making the same

2007-07-03

2007-07-03

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S335000

Reexamination Certificate

active

10837918

ABSTRACT:
Extended-drain MOS transistor devices and fabrication methods are provided, in which a drift region of a first conductivity type is formed between a drain of the first conductivity type and a channel. The drift region comprises first and second portions, the first portion extending partially under a gate structure between the channel and the second portion, and the second portion extending laterally between the first portion and the drain, wherein the first portion of the drift region has a concentration of first type dopants higher than the second portion.

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