Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product
Reexamination Certificate
2007-01-12
2008-09-02
Le, Hoa V (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Finishing or perfecting composition or product
C430S463000
Reexamination Certificate
active
07419773
ABSTRACT:
A rinsing process is performed by supplying a rinsing liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.
REFERENCES:
patent: 4786578 (1988-11-01), Neisius et al.
patent: 2006/0124586 (2006-06-01), Kobayashi et al.
patent: 7-142349 (1995-06-01), None
patent: 2001-005191 (2001-01-01), None
patent: 2003-524213 (2003-08-01), None
patent: 2004-184648 (2004-07-01), None
U.S. Appl. No. 60/185,343.
Cover page of PCT Publication No. WO 2006/006317with International Search Report (PCT/ISA/210), issued in connection with PCT/JP2005/010068.
Notification Concerning Submission or Transmittal of Priority Document (PCT/IB304) issued in connection with PCT/JP2005/010068 (Jan. 2004).
First Notice Informing the Applicant of the Communication of the International Application to the designated Offices (PCT/IB/308) issued in connection with PCT/JP2005/010068 (Jan. 2004).
Naitou Ryouichirou
Shimoaoki Takeshi
Le Hoa V
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
LandOfFree
Rinsing method and developing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Rinsing method and developing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rinsing method and developing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3990758