Ring crystallization of wafers to prevent thermal shock

Details Ring crystallization of wafers to prevent thermal shock Ring crystallization of wafers to prevent thermal shock

1992-06-15

1994-05-31

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

257620, 257928, 437939, H01L 2934, H01L 2904

Patent

active

053171861

ABSTRACT:
A ring of polycrystalline material is developed around the edge of a wafer by general heating of the wafer and localized heating with a laser beam followed by rapid cooling. The ring of polycrystalline material helps prevent wafer breakage due to thermal shock. One or more additional ring, loop or closed figures of polycrystalline material can be formed inside of said ring of polycrystalline material developed around the edge of the wafer to further reinforce the wafer.

REFERENCES:
patent: 3978333 (1976-08-01), Crisman et al.
patent: 4113547 (1978-09-01), Katz et al.
patent: 4256681 (1981-03-01), Lindmayer
patent: 5148247 (1992-09-01), Miura et al.

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