RIE process for etching silicon isolation trenches and polycides

Details RIE process for etching silicon isolation trenches and polycides RIE process for etching silicon isolation trenches and polycides

1986-09-08

1988-02-23

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156648, 156656, 156657, 1566591, 156662, 252 791, 437233, H01L 21308

Patent

active

047268794

ABSTRACT:
Disclosed is a process for etching semiconductor materials with a high etch rate against an insulator mask using a novel etchant gas mixture. The mixture consists of a chlorocarbon (e.g., CCl.sub.2 F.sub.2, CCl.sub.4 or CCl.sub.3 F), SF.sub.6, O.sub.2 and an inert gas (e.g. He). The preferred gas mixture contains 2/1 ratio of the chlorocarbon to SF6 and the following composition: 1-4% of SF.sub.6, 3-10% of O.sub.2, 74-93% of He and 3-10% of chlorocarbon. The etch rate of silicon (or silicide) against an oxide mask using this etchant gas mixture under normal etching conditions is high, on the order of 30-40. An impressive feature of the process is shape control of trenches by mere manipulation of the RIE system power.

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