(RIE) Plasma process for making metal-semiconductor ohmic type c

Details (RIE) Plasma process for making metal-semiconductor ohmic type c (RIE) Plasma process for making metal-semiconductor ohmic type c

1986-09-15

1989-02-21

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156652, 156653, 156657, 156662, B44C 122

Patent

active

048061999

ABSTRACT:
An improved process of RIE plasma attack of the layer of dielectric material on the surface of wafers of semiconductor material, in correspondence of areas purposely defined by masking, for exposing the underlying semiconductor crystal, in preparation for depositing a layer of material of metallic conduction. After having removed a certain thickness of dielectric according to the known technique, the conditions of attack are modified, substituting the plasma gases and reducing the "bias". The attack is resumed of the residual layer of dielectric and preferably also of a certain thickness of the semiconductor crystal in the same reactor. Ohmic contacts with relatively low contact resistance and great reliability are obtained with a minimum handling of the wafers.

REFERENCES:
patent: 4268374 (1981-05-01), Lepseltzer
patent: 4380489 (1983-04-01), Beinvogl et al.
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patent: 4528066 (1985-07-01), Merkling, Jr. et al.
patent: 4534826 (1985-08-01), Goth et al.
patent: 4582581 (1986-04-01), Flanigan et al.
patent: 4599243 (1986-07-01), Sachdev et al.
patent: 4631248 (1986-12-01), Pasch
patent: 4687543 (1987-08-01), Bowker

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