(RIE) Plasma process for making metal-semiconductor ohmic type c

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156651, 156652, 156653, 156657, 156662, B44C 122

Patent

active

048061999

ABSTRACT:
An improved process of RIE plasma attack of the layer of dielectric material on the surface of wafers of semiconductor material, in correspondence of areas purposely defined by masking, for exposing the underlying semiconductor crystal, in preparation for depositing a layer of material of metallic conduction. After having removed a certain thickness of dielectric according to the known technique, the conditions of attack are modified, substituting the plasma gases and reducing the "bias". The attack is resumed of the residual layer of dielectric and preferably also of a certain thickness of the semiconductor crystal in the same reactor. Ohmic contacts with relatively low contact resistance and great reliability are obtained with a minimum handling of the wafers.

REFERENCES:
patent: 4268374 (1981-05-01), Lepseltzer
patent: 4380489 (1983-04-01), Beinvogl et al.
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4528066 (1985-07-01), Merkling, Jr. et al.
patent: 4534826 (1985-08-01), Goth et al.
patent: 4582581 (1986-04-01), Flanigan et al.
patent: 4599243 (1986-07-01), Sachdev et al.
patent: 4631248 (1986-12-01), Pasch
patent: 4687543 (1987-08-01), Bowker

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

(RIE) Plasma process for making metal-semiconductor ohmic type c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with (RIE) Plasma process for making metal-semiconductor ohmic type c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and (RIE) Plasma process for making metal-semiconductor ohmic type c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1520036

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.