Ridge waveguide type distributed feedback semiconductor laser de

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

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438 31, 438 32, H01L 21302

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active

058800280

ABSTRACT:
A ridge waveguide type distributed feedback semiconductor laser device includes a diffraction grating formed on a surface of a semiconductor wafer, a semiconductor layer formed on the diffraction grating, the semiconductor layer serving to alleviate the irregularity of the diffraction grating, and a stripe-like ridge having a cladding layer and a contact layer formed on the semiconductor layer. Also, a method for manufacturing the ridge waveguide type distributed feedback semiconductor laser device is disclosed.

REFERENCES:
patent: 4704720 (1987-11-01), Yamaguchi et al.
patent: 4782035 (1988-11-01), Fujiwara
patent: 5140149 (1992-08-01), Sakata et al.
patent: 5358896 (1994-10-01), Komatsu et al.

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