Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-09-25
2008-08-05
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
07408799
ABSTRACT:
A nonvolatile ferroelectric memory in an RFID device includes a plurality of word lines, and a plurality of banks each including a cell array. The cell array of one of the banks includes a region to be initialized, wherein the region includes a plurality of memory unit cells each including a ferroelectric capacitor, the memory unit cells being connected to the word lines. The ferroelectric capacitor of a first one of the memory unit cells is connected between a plate line and a cell transistor. The ferroelectric capacitor of a second one of the memory unit cells has one terminal connected to a ground terminal. The first one and the second one of the memory cells are respectively connected to a first one and a second one of the word lines, the first one and the second one of the word lines being connected to each other.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
Phan Trong
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