Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-05
2011-04-05
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27084, C257SE21646, C438S239000
Reexamination Certificate
active
07919801
ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.
REFERENCES:
patent: 5321298 (1994-06-01), Moslehi
patent: 5395778 (1995-03-01), Walker
patent: 5850093 (1998-12-01), Tarng et al.
patent: 6037625 (2000-03-01), Matsubara et al.
patent: 6211549 (2001-04-01), Funaki et al.
patent: 6709931 (2004-03-01), Kim
patent: 7081394 (2006-07-01), Kim et al.
patent: 7094652 (2006-08-01), Watanabe et al.
patent: 7372104 (2008-05-01), Wu et al.
patent: 2003/0067050 (2003-04-01), Kim
patent: 2004/0203207 (2004-10-01), Watanabe et al.
patent: 2006/0084226 (2006-04-01), Nakamura
patent: 2007/0132033 (2007-06-01), Wu et al.
patent: 2007/0194378 (2007-08-01), Richter et al.
patent: 2009/0261396 (2009-10-01), Gogoi et al.
patent: 2009/0261446 (2009-10-01), Gogoi
patent: 2004087818 (2004-03-01), None
patent: 2005064529 (2005-03-01), None
patent: 2007220736 (2007-08-01), None
patent: 2001065328 (2001-11-01), None
patent: 2009/055565 (2009-04-01), None
patent: 2009/055570 (2009-04-01), None
patent: 2009/055572 (2009-04-01), None
patent: 2009/055570 (2009-07-01), None
International Search Report/Written Opinion received for PCT Patent Application No. PCT/US2008/080951 mailed on Jun. 25, 2009, 9 pages.
Non Final Office Action received for U.S. Appl. No. 12/255,429, mailed on Sep. 1, 2010,19 Pages.
Non-Final Office Action received for U.S. Appl. No. 12/255,424, mailed on Aug. 4, 2010, 19 pages.
International Preliminary Report on Patentability/Written Opinion received for PCT Application No. PCT/US2008/080960, mailed on May 6, 2010, 7 pages.
International Preliminary Report on Patentability/Written Opinion received for PCT Application No. PCT/US2008/080957, mailed on May 6, 2010, 6 pages.
International Preliminary Report on Patentability/Written Opinion received for PCT Application No. PCT/US2008/080951, mailed on May 6, 2010, 5 pages.
International Search Report/Written Opinion received for PCT Patent Application No. PCT/US2008/080957 mailed on May 25, 2009, 11 pages.
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US2008/080960, mailed on Aug. 26, 2009, 13 pages.
Abdelaziez Yasser A
Cool Kenneth J.
Cool Patent P.C.
Garber Charles D
HVVi Semiconductors, Inc.
LandOfFree
RF power transistor structure and a method of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with RF power transistor structure and a method of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power transistor structure and a method of forming the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2723976