RF power transistor packages with internal harmonic...

Wave transmission lines and networks – Coupling networks – With impedance matching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C330S302000

Reexamination Certificate

active

08076994

ABSTRACT:
A packaged RE power device includes a transistor having a control terminal and an output terminal and configured to operate at a fundamental operating frequency, an RF signal input lead coupled to the control terminal, and an RF signal output lead coupled to the output terminal. A harmonic reducer is coupled to the control terminal and/or the output terminal of the transistor and is configured to provide a short circuit or low impedance path from the control terminal and/or the output terminal to ground for signals at an Nth harmonic frequency of the fundamental operating frequency, where N>1. The device further includes a package that houses the transistor and the harmonic reducer, with the input lead and the output lead extending from the package. Multi-chip packages are also disclosed.

REFERENCES:
patent: 3662294 (1972-05-01), Jacobs et al.
patent: 5010588 (1991-04-01), Gimlett
patent: 5592122 (1997-01-01), Masahiro et al.
patent: 5748042 (1998-05-01), Norris et al.
patent: 5818880 (1998-10-01), Kriz et al.
patent: 6670801 (2003-12-01), Jian et al.
patent: 6778020 (2004-08-01), Ohta et al.
patent: 6798295 (2004-09-01), Pengelly et al.
patent: 6806106 (2004-10-01), Leighton et al.
patent: 6806767 (2004-10-01), Dow
patent: 6822321 (2004-11-01), Crescenzi, Jr.
patent: 2002/0020894 (2002-02-01), Nishijima
patent: 2004/0145034 (2004-07-01), Fujioka et al.
patent: 2007/0057731 (2007-03-01), Le
patent: 0 949 754 (1999-10-01), None
patent: 0 949 754 (1999-10-01), None
patent: 9162657 (A) (1997-06-01), None
Dupuy et al., “Class F Power Amplifier Using a Multi-Frequency Composite Right/Left Handed Transmission Line Harmonic Tuner”, Microwave Symposium Digest, 2005 IEEE MTT-S International Long Beach, CA, USA, Jun. 12-17, 2005; IEEE, Piscataway, NJ, USA, Jun. 12, 2005, pp. 2023-2026, XP010844961.
International Search Report and Written opinion (15 pages) corresponding to International Application No. PCT/US2008/006722; Mailing Date: Dec. 9, 2008.
Japanese Office Action for corresponding JP Application No. 2010-513188 mailed Aug. 26, 2011.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

RF power transistor packages with internal harmonic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF power transistor packages with internal harmonic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power transistor packages with internal harmonic... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4316795

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.