RF power LDMOS transistor with multiple gate fingers

Details RF power LDMOS transistor with multiple gate fingers RF power LDMOS transistor with multiple gate fingers

2006-08-22

2006-08-22

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

07095080

ABSTRACT:
In an RF power LDMOS transistor comprising multiple pairs of parallel gate fingers (11) located on opposite side of an associated p+sinker (23), and metal clamps (14) for short-circuiting the p+sinkers (23), each gate finger (11) of a pair is associated with separate metal clamps (14) that short-circuit the n+source region (20) and the p+sinker (23) associated with particular gate finger (11). The separate metal clamps (14) associated with each gate finger pairs are separated by a slot (15) that extends between the parallel gate fingers (11), and a metal runner (13) extends in the slot (15) between the separate metal clamps (14) associated with each finger pair from a gate pad. Both gate fingers (11) of a gate finger pair are connected to the associated metal runner (13) at both ends and at predetermined positions along their lengths.

REFERENCES:
patent: 5369045 (1994-11-01), Ng et al.
patent: 5681761 (1997-10-01), Kim
patent: 6744117 (2004-06-01), Dragon et al.

Affiliated with

Also associated with

Rating

RF power LDMOS transistor with multiple gate fingers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF power LDMOS transistor with multiple gate fingers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power LDMOS transistor with multiple gate fingers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3644702